Band-gap engineering for removing shallow traps in rare-earth Lu<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>5</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>12</mml:mn></mml:msub></mml:math>garnet scintillators using Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mrow/><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:math>doping

2011328 citationsJournal Articlebronze Open Access

Authors

Mauro Fasoli · University of Milano-Bicocca

A. Vedda · University of Milano-Bicocca

M. Nikl · Czech Academy of Sciences, Institute of Physics

Chao Jiang · Los Alamos National Laboratory

Blas P. Uberuaga · Los Alamos National Laboratory

David Andersson · Los Alamos National Laboratory

Kenneth J. McClellan

Abstract

We employ a combination of first-principles calculations and optical characterization experiments to explain the mechanism by which Ga${}^{3+}$ doping prevents the trapping of free carriers due to shallow traps in RE${}_{3}$Al${}_{5}$O${}_{12}$ garnet scintillators (where RE represents a $3+$ rare-earth cation). Specifically, we confirm that Ga${}^{3+}$ doping does not reduce the defect concentration (defect engineering), but rather leads to shifts in the valence and conduction bands such that the energy level of shallow defects is no longer in the forbidden gap where electrons can be trapped (band-gap engineering).

Topics & Keywords

Radiation Detection and Scintillator Technologies Luminescence Properties of Advanced Materials Ga2O3 and related materials

Publication Details

Published in: Physical Review B

Volume 84, Issue 8

DOI: 10.1103/physrevb.84.081102

Field-Weighted Citation Impact: 25.06

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