Polarity-dependent memory switching and behavior of Ag dendrite in Ag-photodoped amorphous As2S3 films

High cyclical reproducibility in polarity-dependent switching and memory function was obtained. Switching and memory effect seem to occur when both electrodes (Mo and Ag) are bridged by Ag dendrite which originates as the result of Ag photodoping. The combination of Ag electrode and another kind of electrode material may be responsible for the polarity-dependent switching and memory by the help of appropriate voltage shapes. Behavior of Ag dendrite was observed in relation to the similar electrical characteristics in a modified device structure. No thermal effects may be contained in the functional processes. Temperature dependence and frequency characteristics of the device resistances are measured and found to support the existence of the Ag dendrite and its role in the function in the original device. Switching transients in addition to the durability show the availability of the device in the compatibility with the magnetic core memory.