Temperature Dependence of Charge Carrier Properties in Single Crystal CVD Diamond Detectors

Single crystal chemical-vapour deposition (scCVD) diamonds are interesting for a wide range of applications. For many of them a good understanding of the temperature dependence of charge carrier transport mechanisms and properties is crucial. Measurements on the temperature dependence of charge carrier movement in scCVD diamond semiconductor detectors are presented. The evolution of the pulse shape of the detector response from impinging α particles is measured as a function of temperature employing the α-induced transient current technique (α-TCT) within a temperature range from 67 K to 295 K. The measurements are used to extract the drift mobility, drift velocity, and saturation velocity, in terms of which the results are interpreted.