Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications

201223 citationsJournal Article

Authors

Sheng-Yao Hsu · National Yang Ming Chiao Tung University

Hsiao‐Yu Chen · National Yang Ming Chiao Tung University

Kuan‐Neng Chen · National Yang Ming Chiao Tung University

Abstract

A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration.

Topics & Keywords

3D IC and TSV technologies Electronic Packaging and Soldering Technologies Copper Interconnects and Reliability

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Electron Device Letters

Volume 33, Issue 7, pp. 1048-1050

DOI: 10.1109/led.2012.2194769

Field-Weighted Citation Impact: 1.72