W-Band Microstrip Oscillator Using InP Gunn Diode

19873 citationsJournal Article

Authors

Abstract

A low cost, light weight, rugged microstrip oscillator with a very simple structure has been developed in W-Band (34 GHz). The active element is an InP Gunn device operating in its fundamental mode of oscillation. The oscillator provides 35 mW of CW output power and a bias tuning bandwidth of 400 MHz.

Topics & Keywords

Superconducting and THz Device Technology Microwave Engineering and Waveguides Radio Frequency Integrated Circuit Design

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Volume 26, pp. 981-982

DOI: 10.1109/mwsym.1987.1132586

Field-Weighted Citation Impact: 0.63