Clustering effects in Ga(AsBi)

2010128 citationsJournal Article

Authors

Sebastian Imhof · Chemnitz University of Technology

A. Thränhardt · Chemnitz University of Technology

A. Chernikov · Philipps University of Marburg

Martín Koch · Philipps University of Marburg

N. S. Köster · Philipps University of Marburg

Kolja Kolata · Philipps University of Marburg

Sangam Chatterjee

Abstract

The photoluminescence from a Ga(AsBi) sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.

Topics & Keywords

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces Advanced Semiconductor Detectors and Materials

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Physics Letters

Volume 96, Issue 13

DOI: 10.1063/1.3374884

Field-Weighted Citation Impact: 8.21