High-efficiency UV LEDs on sapphire

20155 citationsJournal Article

Authors

Max Shatalov · Sensor Electronic Technology (United States)

Rakesh Jain · Sensor Electronic Technology (United States)

Alex Dobrinsky · Sensor Electronic Technology (United States)

Wenhong Sun · Sensor Electronic Technology (United States)

Yuri Bilenko · Sensor Electronic Technology (United States)

Jinwei Yang · Sensor Electronic Technology (United States)

M. S. Shur

Abstract

We discuss factors affecting the external quantum efficiency, droop and reliability of AlGaN deep ultraviolet (DUV) light emitting diodes (LED) grown on sapphire substrates. Improvement of LED performance is achieved by suppression of the nonradiative recombination in epitaxial structures with dislocation density reduced to below 5x10<sup>8</sup> cm<sup>-2</sup>, transparent LED structure design and optimized UV encapsulation for enhanced light extraction. Relatively low light extraction efficiency remains to be a key factor limiting LED output power and quantum efficiency.

Topics & Keywords

GaN-based semiconductor devices and materials Ga2O3 and related materials ZnO doping and properties

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Volume 9363, pp. 93631M-93631M

DOI: 10.1117/12.2079874

Field-Weighted Citation Impact: 1.02