Extreme Terahertz Nonlinearities in Undoped GaAs Driven by Ultrahigh Near-Fields in Metamaterials

20140 citationsJournal Article

Authors

C. Lange · University of Regensburg

T. Maag · University of Regensburg

M. Hohenleutner · University of Regensburg

S. Baierl · University of Regensburg

Eric R. J. Edwards

Dominique Bougeard · University of Regensburg

Georg Woltersdorf

R. Huber ·

Abstract

Local terahertz fields of multiple 10 MV/cm tailored in gold metamaterials drive electronic interband transitions in intrinsic GaAs. The bandgap exceeds the THz photon energy 400-fold. Photoluminescence microscopy maps the THz near-field distribution.

Topics & Keywords

Terahertz technology and applications Superconducting and THz Device Technology Microwave Engineering and Waveguides

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

DOI: 10.1364/cleo_si.2014.sw1f.2

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