Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wells

1985166 citationsJournal Article

Authors

J. S. Weiner · AT&T (United States)

D. S. Chemla · AT&T (United States)

David A. B. Miller · AT&T (United States)

Thomas H. Wood · AT&T (United States)

D. L. Sivco · AT&T (United States)

A. Y. Cho · AT&T (United States)

Abstract

The first observation of strong and well-resolved exciton peaks in the room-temperature absorption spectra of infrared band-gap multiple quantum well structures (MQW’s) is reported. Assignment of the optical resonances in the absorption spectra of GaInAs/AlInAs MQW’s yields the material parameters of this new heterojunction. The discontinuities of the conduction and valence bands are found to be ΔEc=0.44 eV and ΔEv=0.29 eV, respectively.

Topics & Keywords

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Spectroscopy and Laser Applications

Publication Details

Published in: Applied Physics Letters

Volume 46, Issue 7, pp. 619-621

DOI: 10.1063/1.95504

Field-Weighted Citation Impact: 20.13

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Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wells

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Abstract

Topics & Keywords

Publication Details