Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

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Authors

Hongjian Tang · California Institute of Technology

Roland Kawakami · University of California, Santa Barbara

D. D. Awschalom · University of California, Santa Barbara

M. L. Roukes · California Institute of Technology

Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Topics & Keywords

ZnO doping and properties Magnetic properties of thin films Magnetic Field Sensors Techniques

Publication Details

Published in: Physical Review Letters

Volume 90, Issue 10, pp. 107201-107201

DOI: 10.1103/physrevlett.90.107201

Field-Weighted Citation Impact: 19.33

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Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

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Abstract

Topics & Keywords

Publication Details