High-energy electron irradiation of different silicon materials

The effects of 900 MeV electron irradiation on different types of silicon substrates (standard and oxygenated float-zone, Czochralski, and epitaxial silicon) have been experimentally investigated. Irradiations up to a fluence of 2.1/spl times/10/sup 15/ e/cm/sup 2/ have been performed with the electron beam of the LINAC injector at the synchrotron light facility Elettra in Trieste (Italy). Irradiated devices have been electrically characterized by reverse I-V and C-V measurements. Substrate type inversion has been observed for standard and oxygenated float-zone but not for Czochralski and epitaxial devices. The effects of isothermal annealing cycles at 80/spl deg/C have also been studied, and the hardness factor of 900 MeV electrons, with respect to 1 MeV neutrons, has been experimentally estimated from the measurement of the reverse leakage current after annealing.