Potential performance of indium-nitride-based devices

200696 citationsJournal Article

Authors

Stephen K. O’Leary · University of Regina

M. S. Shur · Rensselaer Polytechnic Institute

Abstract

We study how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk wurtzite indium nitride. We find that the optimal cutoff frequency for an ideal indium-nitride-based device ranges from around 10GHz when the device thickness is set to 10μm to about 2.5THz when the device thickness is set to 0.1μm. We thus suggest that indium nitride offers great promise for future high-speed device applications.

Topics & Keywords

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Semiconductor materials and devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Applied Physics Letters

Volume 88, Issue 15

DOI: 10.1063/1.2193469

Field-Weighted Citation Impact: 7.19