Investigation of non-equilibrium processes in semiconductors by the method of transient holograms

The transient behaviour and the intensity of light selfdiffracted on free carrier grating is analysed. It includes one- and two-photon generation, diffusion, and linear recombination of carriers. A contactless methods for the determination of the value of free carrier ambipolar diffusion coefficient and for the measuring of the dependence of free carrier concentration upon excitation level are developed. The experimental data in Si and CdSe single crystals are in good agreement with those obtained by other methods. [Russian Text Ignored].