Process integration of a 27nm, 16Gb Cu ReRAM

201455 citationsJournal Article

Authors

J. Zahurak · Micron (United States)

Koji Miyata · Dexerials (Japan)

Mark H. Fischer · Micron (United States)

Murali Balakrishnan · Micron (United States)

Sameer Chhajed · Micron (United States)

David Wells · Micron (United States)

Hong Li ·

Abstract

A 27nm 16Gb Cu based NV Re-RAM chip has been demonstrated. Novel process introduction to enable this technology include a Damascene Cell, Line-SAC Digit Lines filled with Cu, exhumed-silicided array contacts, raised epitaxial arrays, and high-drive buried access devices.

Topics & Keywords

Advanced Memory and Neural Computing Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices

Publication Details

DOI: 10.1109/iedm.2014.7046994

Field-Weighted Citation Impact: 5.53

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Process integration of a 27nm, 16Gb Cu ReRAM

Authors

Abstract

Topics & Keywords

Publication Details