A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)

1985265 citationsJournal Article

Authors

Naoki Yokoyama · Fujitsu (China)

Kenichi Imamura · Fujitsu (China)

Shunichi Muto · Fujitsu (China)

S. Hiyamizu · Fujitsu (China)

H. Nishi · Fujitsu (China)

Abstract

Abstract-A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.

Topics & Keywords

Quantum and electron transport phenomena Advancements in Semiconductor Devices and Circuit Design Semiconductor Quantum Structures and Devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Japanese Journal of Applied Physics

Volume 24, Issue 11A, pp. L853-L853

DOI: 10.1143/jjap.24.l853

Field-Weighted Citation Impact: 15.50