Silicon carbide on insulator formation using the Smart Cut process [Note 1]

1996120 citationsJournal Article

Authors

L. Di Cioccio · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

F. Letertre · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

C. Jaussaud · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

M. Bruel · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Abstract

The Smart Cut process has been applied for the first time to SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycristalline SiC and on silicon substrates.

Topics & Keywords

Silicon and Solar Cell Technologies Silicon Carbide Semiconductor Technologies Advanced Surface Polishing Techniques

Publication Details

Published in: Electronics Letters

Volume 32, Issue 12, pp. 1144-1145

DOI: 10.1049/el:19960717

Field-Weighted Citation Impact: 14.09

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Silicon carbide on insulator formation using the Smart Cut process [Note 1]

Authors

Abstract

Topics & Keywords

Publication Details