Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K

Epitaxial growth of silicon on Ge (100), Si (100) and Si (111) wafers at substrate temperatures close to 400 K was observed in ion beam deposition experiments under UHV conditions (10−7 Pa). Single-charged Si+ beams of about 5-10 μA at an acceleration energy of 50 eV and a 5-mm-diam spot size were employed. Purity and crystallinity of the layers formed were checked by Auger electron spectroscopy (AES) and Rutherford high energy electron diffraction (RHEED).