Laser activation of dopants for nanowire devices on glass and plastic

We report postgrowth doping of silicon nanowires (SiNWs) through ion implantation and subsequent annealing with nanosecond pulsed laser light. The green laser annealing process allows for polarization selective localized heating and enables highly efficient activation of implanted boron and arsenic in the SiNWs as revealed by electrical resistivity measurements. Transistor devices fabricated by this technique show reduced parasitic series resistance and higher drive currents making the process suitable for fabrication of high-performance NW based electronics on glass and plastics.