Growth, Structural, and Optical Properties of Self-Assembled (In,Ga)As Quantum Posts on GaAs

Self-assembled quantum dots embedded in semiconductor heterostructures have proved to be a rich system for exploring the physics of three dimensionally confined charges and excitons. We present here a novel structure, which allows adjusting the level of confinement between 3D and 2D for electrons and holes, respectively. The quantum post consists of a quantum dot connected to a short quantum wire. The molecular beam epitaxy deposition of these self-assembled structures is discussed, and their structural and chemical compositions are presented. Their optical properties measured by photoluminescence are compared to an eight-band strain-dependent k.p model incorporating detailed structure and alloy composition. The calculations show electron delocalization in the quantum wire part of the quantum post and hole localization in the strain-induced regions at the ends of the quantum post. The quantum post offers the possibility of controlling the dipole moment in the structure and opens up new means for tuning the intra-subband transitions by controlling its dimensions.