Ultrafast Transfer of Metal‐Enhanced Carbon Nanotubes at Low Temperature for Large‐Scale Electronics Assembly

An indium-assisted ultrafast carbon nanotube (CNT) transfer method with a yield rate over 90% is described. Metal-coated as-transferred CNT structures exhibit excellent electrical performance that is at least one order of magnitude better than the previously published results. Shear test results show that the adhesion between CNTs and the substrate is greatly improved and excellent flexibility is obtained after the transfer process.