Space-charge waves in silicon carbide

Space-charge waves (trap recharging waves) and the effect of spatial rectification of space-charge waves have been investigated in single crystals of 4H-SiC polytype. The relevant experimental dependencies have been found to be in quite good quantitative agreement with the theory of space-charge waves. The following parameters of the samples studied were determined: μτ=(7.4±0.8)×10−7cm2∕V, τM=(5.3±0.6)×10−4s, and Neff=(5±1)×1013cm−3.