SiO <sub>2</sub> /native double-gate InSb MOSFETs

19857 citationsJournal Article

Authors

T. Takahashi · Tokyo Institute of Technology

Osamu Sugiura · Tokyo Institute of Technology

I. Watanbe · Tokyo Institute of Technology

M. Matsumura · Tokyo Institute of Technology

Abstract

An InSb MOS double-gate structure formed by a novel thermal oxidation method has been investigated. C/V characteristics showed a sharp change and no hysteresis. Both n-channel and p-channel MOSFETs have been successfully operated. The effective mobility at 77 K was approximately 7800 cm2/Vs for the n-channel and 300 cm2/Vs for the p-channel.

Topics & Keywords

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis

UN Sustainable Development Goals

Clean water and sanitation

Publication Details

Published in: Electronics Letters

Volume 21, Issue 12, pp. 545-547

DOI: 10.1049/el:19850385

Field-Weighted Citation Impact: 1.08