AlGaN deep ultraviolet LEDs with external quantum efficiency over 10%

20136 citationsJournal Article

Authors

Max Shatalov · Sensor Electronics (United States)

Jinwei Yang · Sensor Electronic Technology (United States)

Yuri Bilenko · Sensor Electronic Technology (United States)

M. S. Shur · Rensselaer Polytechnic Institute

R. Gaška · Sensor Electronic Technology (United States)

Abstract

Deep UV LED structures with UV transparent design, reflective p-electrodes and die encapsulation exhibited external quantum efficiency above 11%. Progress in material growth and device fabrication will be discussed along with issues further limiting efficiency.

Topics & Keywords

GaN-based semiconductor devices and materials Ga2O3 and related materials ZnO doping and properties

Publication Details

DOI: 10.1109/cleopr.2013.6599920

Field-Weighted Citation Impact: 1.11

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AlGaN deep ultraviolet LEDs with external quantum efficiency over 10%

Authors

Abstract

Topics & Keywords

Publication Details