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Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
2012
1,731 citations
Journal Article
green Open Access
Field-Weighted Citation Impact:
59.00
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics | Researchclopedia
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Seoul National University
A. Gholinia
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University of Manchester
Sarah J. Haigh
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O. Makarovsky
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University of Nottingham
L. Eaves
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University of Nottingham
Л. А. Пономаренко
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A. K. Geǐm
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Kostya S. Novoselov
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Artem Mishchenko
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University of Manchester