Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering

1999791 citationsJournal Articlegreen Open Access

Authors

Stefan Facsko · Westfälische Hochschule

T. Dekorsy · Westfälische Hochschule

C. Koerdt · Westfälische Hochschule

C. Trappe · Westfälische Hochschule

H. Kurz · Westfälische Hochschule

A. Vogt · Technical University of Darmstadt

H. L. Hartnagel ·

Abstract

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

Topics & Keywords

Ion-surface interactions and analysis Diamond and Carbon-based Materials Research Integrated Circuits and Semiconductor Failure Analysis

Publication Details

Published in: Science

Volume 285, Issue 5433, pp. 1551-1553

DOI: 10.1126/science.285.5433.1551

Field-Weighted Citation Impact: 24.45

Command Palette

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering

Authors

Abstract

Topics & Keywords

Publication Details