High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer

GaInAs/GaAs quantum-dot lasers were fabricated by self-organized growth in a molecular beam epitaxy system. By using a single active layer, lasers with low-threshold current densities (Jth=144 A/cm2 for a 2 mm long device) and high internal quantum efficiencies (>90%) were obtained. Ground-state lasing of the quantum dots was observed up to a device temperature of 214 °C.