Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3N4/Si at 1000 °C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the sp2 graphitic structures. The films show ohmic behavior with a sheet resistance of ∼2.3–10.5 kΩ/◻ at room temperature. An electric field effect of ∼2–10% (VG=−20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.