High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si

In this paper, we present first demonstration of InGaAs-on-insulator (-OI) MOSFETs with wafer size scalability up to Si wafer size of 300 mm and larger by direct wafer bonding (DWB) process using InGaAs channels grown on 4-inch Si donor substrates with III-V buffer layers instead of InP donor substrates. It is found that this DWB process can provide the high quality InGaAs thin films on Si. The fabricated InGaAs-OI MOSFETs exhibited the high electron mobility of 1700 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs and large mobility enhancement of 3 × against Si MOSFETs.