Extremely low noise InGaP/GaAsHBT oscillator at C-band

A state-of-the-art very low phase noise integrated hybrid dielectric resonator oscillator (DRO) working at 6.7 GHz has been designed and fabricated using a self-aligned InGaP/GaAs HBT as the active device. Very low PM noise has been experimentally obtained: –124 dBc/Hz at 10 kHz off-carrier. This result is compared with other silicon oscillator circuits fabricated with a similar topology. At least a 12 dB improvement for the HBT technology is observed.