Comparison between CIGS and triple junction GaAS on thin GE solar cell assemblies and related development strategies

20084 citationsJournal Article

Authors

R. Contini · CESI (Italy)

E. Ferrando · Istituto Nazionale di Fisica Nucleare, Galileo Galilei Institute for Theoretical Physics

D. Hazan · Istituto Nazionale di Fisica Nucleare, Galileo Galilei Institute for Theoretical Physics

Romano Romani · Istituto Nazionale di Fisica Nucleare, Galileo Galilei Institute for Theoretical Physics

R. Campesato · CESI (Italy)

M. Casale · CESI (Italy)

Abstract

The likeliest evolution of the space borne solar cell assemblies is towards thinner and lighter structures, capable to be used in combination with solar generator systems having a reduced volume at launch, combined with outstanding electrical performances.

Topics & Keywords

Chalcogenide Semiconductor Thin Films solar cell performance optimization Advanced Semiconductor Detectors and Materials

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Conference record of the IEEE Photovoltaic Specialists Conference

DOI: 10.1109/pvsc.2008.4922698

Field-Weighted Citation Impact: 2.86

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