Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

2000238 citationsJournal Article

Authors

Yang‐Kyu Choi · University of California, Berkeley

K. Asano · University of California, Berkeley

N. Lindert · University of California, Berkeley

Vivek Subramanian · University of California, Berkeley

Tsu-Jae King · University of California, Berkeley

Jeffrey Bokor · University of California, Berkeley

Chenming Hu

Abstract

A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.

Topics & Keywords

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Integrated Circuits and Semiconductor Failure Analysis

UN Sustainable Development Goals

Life below water

Publication Details

Published in: IEEE Electron Device Letters

Volume 21, Issue 5, pp. 254-255

DOI: 10.1109/55.841313

Field-Weighted Citation Impact: 13.27