Si/Pd ohmic contact to <i>n</i> -GaP based on thesolid phase regrowth principle

19966 citationsJournal Article

Authors

I.-H. Tan · Hewlett-Packard (United States)

F. A. Kish · Hewlett-Packard (United States)

Abstract

A Si/Pd ohmic scheme (contact resistivity ~2 × 10-4 Ω-cm2 ) annealed between 400 and 650°C has been developed for n-GaP (n~5 × 1017 cm3). The ohmic contact formation mechanism can be rationalised in terms of the solid phase regrowth (SPR) principle and the solid phase epitaxy of Si on n-GaP.

Topics & Keywords

Semiconductor materials and interfaces Semiconductor materials and devices Integrated Circuits and Semiconductor Failure Analysis

Publication Details

Published in: Electronics Letters

Volume 32, Issue 4, pp. 409-410

DOI: 10.1049/el:19960224

Field-Weighted Citation Impact: 0.51

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Si/Pd ohmic contact to <i>n</i> -GaP based on thesolid phase regrowth principle

Authors

Abstract

Topics & Keywords

Publication Details