High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

200253 citationsJournal Article

Authors

Chang‐Hsiao Chen · National Cheng Kung University

Y.K. Su · National Cheng Kung University

Shoou‐Jinn Chang · National Cheng Kung University

G.C. Chi · National Cheng Kung University

Jinn‐Kong Sheu · National Cheng Kung University

J.F. Chen · National Cheng Kung University

C.H. Liu ·

Abstract

In this work, we have applied the so called charge asymmetric resonance tunneling (CART) structure to nitride-based green light emitting diode (LED). From our CART LED, we observed an abrupt turn-on voltage near 2.2 V, and the forward voltage is around 3.2 V at 20 mA injection current. At 20 mA, the output power, and external quantum efficiency of the CART LED are about 4 mW, and 6.25%, respectively. The high brightness and efficiency green LED can be obtained by using the CART structure.

Topics & Keywords

Semiconductor Quantum Structures and Devices Quantum and electron transport phenomena GaN-based semiconductor devices and materials

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Electron Device Letters

Volume 23, Issue 3, pp. 130-132

DOI: 10.1109/55.988814

Field-Weighted Citation Impact: 7.84