101-Stage 2 µm gate ring oscillators in laser-grown silicon islands embedded in SiO₂

E/D MOS test transistors and 101-stage 2 µm gate E/D MOS ring oscillators were fabricated in laser-grown single- and multicrystal islands embedded in oxide substrates. Most transistors showed good <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I-V</tex> characteristics, short-channel effects, and kink effects. Ring oscillators had a switching delay per stage (τ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Pd</inf> ) of 0.4 ns and a power-delay product (τ <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">_{Pd} \middot P_{d}</tex> ) of 2.5 PJ at a supply voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> ) of 10-15 V. It was noted that different crystal orientations of the islands posed no difficulty in processing and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> control when applied to short channel devices, and that enhanced boundary diffusion results in occasional malfunctional transistors and erroneous high surface electron mobilities (µ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">se</inf> ).