Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopy

1983162 citationsJournal Article

Authors

V. V. Toporov · TU Bergakademie Freiberg

B. H. Bairamov · TU Bergakademie Freiberg

J. Monecke · Physico-Technical Institute

Abstract

Abstract A method is presented which allows the determination of the charge carrier concentration and mobility in n‐GaP by Raman spectroscopy of coupled plasmon‐phonon modes. The results are compared with those of electrical measurements.

Topics & Keywords

Semiconductor Quantum Structures and Devices Nanowire Synthesis and Applications Semiconductor materials and devices

Publication Details

Published in: physica status solidi (b)

Volume 119, Issue 2, pp. 595-603

DOI: 10.1002/pssb.2221190219

Field-Weighted Citation Impact: 1.49

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Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopy

Authors

Abstract

Topics & Keywords

Publication Details