Measurement of Forbidden Energy Gap of Semiconductors by Diffuse Reflectance Technique

Abstract Diffuse reflectance technique for the measurement of forbidden energy gap, E g , is discussed. The energy coordinate of the point at which the linear increase in the Kubelka‐Munk function starts gives the E g ‐value. The E g ‐values of fifteen semiconductors are reported. These E g ‐values are found to be in good agreement with those measured by other methods.