Basic principles of STT-MRAM cell operation in memory arrays

2013537 citationsJournal Article

Authors

A. V. Khvalkovskiy · Samsung (United States)

Dmytro Apalkov · Samsung (United States)

Steven Watts · Samsung (United States)

Roman V. Chepulskii · Samsung (United States)

R. S. Beach · Samsung (United States)

A. Ong · Samsung (United States)

X. Tang ·

Abstract

For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.

Topics & Keywords

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Advanced Memory and Neural Computing

Publication Details

Published in: Journal of Physics D Applied Physics

Volume 46, Issue 7, pp. 074001-074001

DOI: 10.1088/0022-3727/46/7/074001

Field-Weighted Citation Impact: 27.70

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Basic principles of STT-MRAM cell operation in memory arrays

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Abstract

Topics & Keywords

Publication Details