TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs

199825 citationsJournal Article

Authors

Randall Milanowski · Vanderbilt University

M.P. Pagey · Dynamic Research (United States)

L. W. Massengill · Vanderbilt University

Ronald D. Schrimpf · Vanderbilt University

Michael Wood · Naval Information Warfare Systems Command

Bruce W. Offord · Naval Information Warfare Systems Command

R.J. Graves

Abstract

Enhanced back-channel leakage in a mesa SOI device architecture is analyzed. Using integrated process, device, and hole trapping simulation, the cause of the leakage enhancement is identified as enhanced hole trapping in the buried oxide near the island edge. Simulation results suggest this edge effect may be mitigated using body-tied-to-source tabs at the edge of the island. The potential performance and manufacturing impacts of this measure are discussed.

Topics & Keywords

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis

UN Sustainable Development Goals

Life below water

Publication Details

Published in: IEEE Transactions on Nuclear Science

Volume 45, Issue 6, pp. 2593-2599

DOI: 10.1109/23.736502

Field-Weighted Citation Impact: 4.71