An improved packaging technology for RF power transistors

20051 citationsJournal Article

Authors

J.T.S. Walker · Semelab (United Kingdom)

Abstract

This paper presents an improved packaging technology for RF power transistors that is beryllia-free and which halves the thermal resistance compared with the conventional approach. This new technology also reduces the source inductance and increases the gain.

Topics & Keywords

3D IC and TSV technologies Semiconductor Lasers and Optical Devices Radio Frequency Integrated Circuit Design

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE MTT-S International Microwave Symposium Digest, 2005.

DOI: 10.1109/mwsym.2005.1516841

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