Heavy ion-induced digital single-event transients in deep submicron Processes

2004133 citationsJournal Article

Authors

J.M. Benedetto · University of Colorado Colorado Springs

Paul Eaton · Microelectronics Research Development (United States)

Keith Avery · Microelectronics Research Development (United States)

D.G. Mavis · Microelectronics Research Development (United States)

Matthew J. Gadlage · Naval Sea Systems Command

T.L. Turflinger · Naval Sea Systems Command

P.E. Dodd

Abstract

Single-event transients (SETs) in digital circuits/processes are examined. SETs appear to substantially mitigate traditional SEU static-latch hardening techniques below 0.25 /spl mu/m. The resulting IC error rate for advanced technology node hardened-electronics is dominated by the combinational-logic SET rate.

Topics & Keywords

Radiation Effects in Electronics Semiconductor materials and devices Advanced Memory and Neural Computing

Publication Details

Published in: IEEE Transactions on Nuclear Science

Volume 51, Issue 6, pp. 3480-3485

DOI: 10.1109/tns.2004.839173

Field-Weighted Citation Impact: 12.18

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Heavy ion-induced digital single-event transients in deep submicron Processes

Authors

Abstract

Topics & Keywords

Publication Details