Improved 1/f Noise Characteristics in Locally Strained Si CMOS Using Hydrogen-Controlled Stress Liners and Embedded SiGe

This paper reports the first experimental demonstration of improved 1/f noise characteristics in a locally strained Si MOS through hydrogen-controlled stress liners and embedded SiGe (eSiGe). For NMOS, the high hydrogen density (1times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) in the stress liner results in three times more noise than that of PMOS. For PMOS, eSiGe proves to be superior to a compressive stress liner in noise due to the low hydrogen density in the system. The controlled stress does not generate interface states or other scattering centers, which increase noise, and only improves 1/f noise due to carrier mass reduction