The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The effect of different gate oxide processes on the performance of 4H-SiC MOSFETs has been studied. These processes include different gate oxide depositions (high-temperature oxide, low-temperature oxide, and plasma-enhanced chemical vapor deposition oxide) and annealing processes (oxygen, NO, and <formula formulatype="inline"><tex>$\hbox{CO}_{2}$</tex></formula>). Various MOS device parameters, particularly, threshold voltage, subthreshold slope, field-effect electron mobility, sheet electron carrier concentration, and Hall mobility, are correlated with various process steps. </para>