Binding Energy of Hydrogen-Like Impurities in a Thin Semiconductor Wire with Complicated Dispersion Law in a Magnetic Field

The binding energy of a hydrogen-like impurity in a quantum well wire (QWW) of A3B5-type semiconductors with Kane's dispersion law in a magnetic field B parallel to the wire axis has been calculated as a function of the radius of the wire and magnitude of B, using a variational approach. It is shown that the nonparabolicity of the dispersion law leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid nonlinear growth of binding energy with B.