Temperature dependence of radiation damage and its annealing in silicon detectors

199347 citationsJournal Article

Authors

H. J. Ziock · Los Alamos National Laboratory

J. G. Boissevain · Los Alamos National Laboratory

K. Holzscheiter · Los Alamos National Laboratory

J. Kapustinsky · Los Alamos National Laboratory

A. P. T. Palounek · Los Alamos National Laboratory

W. E. Sondheim · Los Alamos National Laboratory

E. Barberis

Abstract

The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider induces significant leakage currents in Si detectors. In order to limit these currents, the detectors are operated at reduced temperatures ( approximately 0 degrees C). Results are presented of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in Si PIN detectors. Depletion voltage results are reported. The detectors are exposed to approximately 10/sup 14//cm/sup 2/ 650-MeV protons. Very pronounced temperature dependences are observed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Topics & Keywords

Particle Detector Development and Performance Silicon and Solar Cell Technologies Radiation Effects in Electronics

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Transactions on Nuclear Science

Volume 40, Issue 4, pp. 344-348

DOI: 10.1109/23.256577

Field-Weighted Citation Impact: 13.48