Total ionizing dose effects in MOS oxides and devices

2003906 citationsJournal Articlegreen Open Access

Authors

Timothy R. Oldham · Goddard Space Flight Center

F. B. McLean · Office of Ocean Exploration and Research

Abstract

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.

Topics & Keywords

Semiconductor materials and devices Radiation Effects in Electronics Advancements in Semiconductor Devices and Circuit Design

UN Sustainable Development Goals

Clean water and sanitation

Publication Details

Published in: IEEE Transactions on Nuclear Science

Volume 50, Issue 3, pp. 483-499

DOI: 10.1109/tns.2003.812927

Field-Weighted Citation Impact: 6.40