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We determine the density-dependent electron mass m(*) in two-dimensional electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov-de Haas measurements. Using very high-quality transistors with tunable electron densities we measure m(*) in single, high mobility specimens over a wide range of r(s) (6 to 0.8). Toward low densities we observe a rapid increase of m(*) by as much as 40%. For 2>r(s)>0.8 the mass values fall approximately 10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.