A novel metal-insulator-metal structure for field-programmable devices

A metal-insulator-metal (MIM) capacitor structure has been developed for use in field-programmable gate arrays (FPGAs) as a voltage-programmable link (VPL). The structure relies on a combination of a refractory metal and aluminum as the lower electrode, and either a similar combination or aluminum alone as the top electrode. The insulator is prepared by means of plasma-enhanced chemical vapor deposition (PECVD). It comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two like layers of silicon-rich silicon nitride. The structure has displayed characteristics desirable for use in emerging FPGA technology, including high density, low on-resistance, reduced capacitance, and low programming voltage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>