InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

199268 citationsJournal Article

Authors

Abstract

An overview of the different contributions due to carrier-induced effects that appear in InP/GaInAsP guided-wave phase modulators is given. The authors review and calculate the band-filling effect in such devices and point out optimized structures. The fabrication of phase modulators and directional coupler switches based on a GaInAsP/InP heterostructure is described. These devices exhibit modulation characteristics in good agreement with the calculations having a phase modulation efficiency as high as 11 degrees /V mm and low optical losses.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Topics & Keywords

Semiconductor Quantum Structures and Devices Photorefractive and Nonlinear Optics Photonic and Optical Devices

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: Journal of Lightwave Technology

Volume 10, Issue 1, pp. 63-70

DOI: 10.1109/50.108738

Field-Weighted Citation Impact: 2.32