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MOVPE growth of GaN on Si(111) substrates

2002138 citationsJournal Article

Authors

A. Dadgar · Otto-von-Guericke University Magdeburg

M. Poschenrieder · Otto-von-Guericke University Magdeburg

J. Bläsing · Otto-von-Guericke University Magdeburg

O. Contreras · Arizona State University

F. Bertram · Otto-von-Guericke University Magdeburg

T. Riemann · Otto-von-Guericke University Magdeburg

Topics & Keywords

GaN-based semiconductor devices and materials Metal and Thin Film Mechanics Semiconductor materials and devices

Publication Details

Published in: Journal of Crystal Growth

Volume 248, pp. 556-562

DOI: 10.1016/s0022-0248(02)01894-8

Field-Weighted Citation Impact: 2.71

MOVPE growth of GaN on Si(111) substrates | Researchclopedia

· Otto-von-Guericke University Magdeburg

M. Kunze · Universität Ulm

I. Daumiller · Universität Ulm

A. Krtschil · Otto-von-Guericke University Magdeburg

A. Diez · Otto-von-Guericke University Magdeburg

F. A. Ponce · Arizona State University

E. Kohn · Universität Ulm

A. Krost · Otto-von-Guericke University Magdeburg