Matching properties of MOS transistors

19893,275 citationsJournal Article

Authors

Abstract

The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on several basic circuits.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Topics & Keywords

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and devices Analog and Mixed-Signal Circuit Design

UN Sustainable Development Goals

Affordable and clean energy

Publication Details

Published in: IEEE Journal of Solid-State Circuits

Volume 24, Issue 5, pp. 1433-1439

DOI: 10.1109/jssc.1989.572629

Field-Weighted Citation Impact: 14.94